technical data npn silicon high power transistor qualified per mil - prf - 19500/262 devices qualified level 2n1722 2n1724 jan jantx maximum ratings ratings symbol value units collector - emitter voltage v ceo 80 vdc collector - base voltage v cbo 175 vdc emitter - base voltage v ebo 10 vdc collector current i c 5.0 adc total power dissipation @ t a = +25 0 c (1) @ t c = +100 0 c (2) p t 3.0 50 w w temperature range: operating storage junction t op , t stg 175 - 65 to +200 0 c 1) derate linearly 20 mw/ 0 c for t a between +25 0 c and +175 0 c 2) derate linearly 666 mw/ 0 c for t c between +100 0 c and +175 0 c to - 61* 2n1724 to - 53* 2n1722 *see appendix a for package outline electrical characteristics characteristics symbol min. max . unit off characteristics collector - emitter breakdown voltage i c = 200 madc v (br) ceo 80 vdc emitter - base breakdown voltage i e = 10 madc v (br) ebo 10 vdc collector - emitter cutoff current v ce = 60 vdc i ces 300 m adc collector - base cutoff cu rrent v cb = 175 vdc i cbo 5.0 madc emitter - base cutoff current v eb = 7.0 vdc i ebo 400 m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n 1722, 2n1724 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics forward - current transfer ratio i c = 2.0 adc, v ce = 15 vdc i c = 5.0 adc, v ce = 15 vdc i c = 100 madc, v ce = 15 vdc h f e 30 15 30 120 collector - emitter saturation voltage i c = 2.0 adc, i b = 200 madc v ce(sat) 0.6 vdc base - emitter saturation voltage i c = 2.0 adc, i b = 200 mvdc v be(sat) 1.2 vdc dynamic characteristics magnitude of common emitter small - sign al short - circuit forward current transfer ratio i c = 500 madc, v ce = 15 vdc; f = 10 mhz ? h fe ? 1.0 5.0 output capacitance v cb = 15 vdc, i e = 0, 100 khz f 1.0 mhz c obo 550 pf 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 79 4 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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